This part is a kind of semiconductor called MGF1601B.

Function of this product has MICROWAVE POWER GaAs FET.

Manufacturers : Mitsubishi

Image and pinout :

Some of the text within the PDF file :

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) • High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA • Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS ( [ ... ]

MGF1601B PDF Datasheet Download