This part is a kind of semiconductor called MGF1601B-01.

Function of this product has High-power GaAs FET.

Manufacturers : Mitsubishi

Image and pinout :

Some of the text within the PDF file :

< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  GG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage D [ ... ]

MGF1601B-01 PDF Datasheet Download