This part is a kind of semiconductor called BSM150GB120DN2.

Function of this product has IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate).

Manufacturers : Siemens Semiconductor Group

Image and pinout :

Some of the text within the PDF file :

BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2108-A70 1200V 210A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 420 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.25 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltag [ ... ]

BSM150GB120DN2 PDF Datasheet Download