This part is a kind of semiconductor called HFT1N60S.
Function of this product has N-Channel MOSFET.
Manufacturers : SemiHow
Image and pinout :

Some of the text within the PDF file :
HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) A [ ... ]
HFT1N60S PDF Datasheet Download
