This part is a kind of semiconductor called BFU910F.

Function of this product has NPN wideband silicon germanium RF transistor.

Manufacturers : NXP

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BFU910F NPN wideband silicon germanium RF transistor Rev. 2 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits  Low noise high gain microwave transistor  Minimum noise figure (NFmin) = 0.65 dB at 12 GHz  Maximum stable gain 14.2 dB at 12 GHz  90 GHz fT SiGe technology 1.3 Applications  Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCE collector-emitter voltage RBE  1 M IC collector current Ptot total po [ ... ]

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