This part is a kind of semiconductor called BD636.

Function of this product has Silicon PNP Power Transistor.

Manufacturers : INCHANGE

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage -60 V wwwVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IBB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsem [ ... ]

BD636 PDF Datasheet Download