This part is a kind of semiconductor called GT50JR22.

Function of this product has Silicon N-Channel IGBT.

Manufacturers : Toshiba

Image and pinout :

Some of the text within the PDF file :

Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter 1 2012-10-15 Rev.1.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics [ ... ]

GT50JR22 PDF Datasheet Download