This part is a kind of semiconductor called TPC8125.

Function of this product has Field Effect Transistor.

Manufacturers : Toshiba

Image and pinout :

Some of the text within the PDF file :

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −10 −40 1.9 1.0 65 −10 150 −55 to 150 Unit V V V A W W mJ A °C °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulse (Note 1) Drain power dissi [ ... ]

TPC8125 PDF Datasheet Download