This part is a kind of semiconductor called 2SC2879A.

Function of this product has SILICON NPN EPITAXIAL PLANAR TYPE.

Manufacturers : Toshiba

Image and pinout :

Some of the text within the PDF file :

2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : ηC = 35% (Min.) Intermodulation Distortion : IMD = −24dB(Max.) (MIL Standard) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 25 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g 2–13B1A Note: Using continuously under heavy l [ ... ]

2SC2879A PDF Datasheet Download