This part is a kind of semiconductor called 2SA1941.

Function of this product has SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −140 V Collector-emitter voltage VCEO −140 V Emitter-base voltage VEBO −5 V Collector current IC −10 A Base current IB −1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperatu [ ... ]

2SA1941 PDF Datasheet Download