This part is a kind of semiconductor called K6A65D.

Function of this product has TK6A65D.

Manufacturers : Toshiba Semiconductor

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Some of the text within the PDF file :

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 6 24 45 281 6 4.5 www.DataSheet.co.kr Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanch [ ... ]

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