This part is a kind of semiconductor called 2SC3604.

Function of this product has NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION.

Manufacturers : NEC

Image and pinout :

Some of the text within the PDF file :

DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 65 580 200 -65 to +150 UNIT V V V mA mW °C °C [ ... ]

2SC3604 PDF Datasheet Download