This part is a kind of semiconductor called B1018A.

Function of this product has 2SB1018A.

Manufacturers : Toshiba

Image and pinout :

Some of the text within the PDF file :

2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under [ ... ]

B1018A PDF Datasheet Download