This part is a kind of semiconductor called B1340.

Function of this product has 2SB1340.

Manufacturers : ROHM Electronics

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn IN [ ... ]

B1340 PDF Datasheet Download