This part is a kind of semiconductor called FDG1024NZ.

Function of this product has N-Channel MOSFET.

Manufacturers : Fairchild Semiconductor

Image and pinout :

Some of the text within the PDF file :

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A „ Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A „ Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A „ Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A „ HBM ESD protection level >2 kV (Note 3) „ Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V) „ Very small package outline SC70-6 „ RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resis [ ... ]

FDG1024NZ PDF Datasheet Download