This part is a kind of semiconductor called 2SC1971.

Function of this product has Silicon NPN Power Transistor.

Manufacturers : Inchange Semiconductor

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i . w 17 4 2 12.5 1.5 150 -55~150 V V n c . i m e A W Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Ther [ ... ]

2SC1971 PDF Datasheet Download