This part is a kind of semiconductor called 5N20V.

Function of this product has GE5N20V.

Manufacturers : Gemos

Image and pinout :

Some of the text within the PDF file :

GEMOS MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● VDS = 20V,ID = 5A Marking and pin Assignment APPLICATIONS ● Battery protection ● Load switch ● Power management TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking [ ... ]

5N20V PDF Datasheet Download