This part is a kind of semiconductor called TY30N50E.

Function of this product has Power Field Effect Transistor.

Manufacturers : Motorola

Image and pinout :

Some of the text within the PDF file :

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Diode is Characterized for Use i [ ... ]

TY30N50E PDF Datasheet Download