This part is a kind of semiconductor called K3562.

Function of this product has 2SK3562.

Manufacturers : Toshiba Semiconductor

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Some of the text within the PDF file :

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC (Note 1) ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) www [ ... ]

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