This part is a kind of semiconductor called DFU1N60.

Function of this product has N-Channel MOSFET.

Manufacturers : DnI

Image and pinout :

Some of the text within the PDF file :

DFU1N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET 2.Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.0A High ruggedness RDS(on) (Max 11.5 Ω )@VGS=10V Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested 1.Gate 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The I-PAK pkg is well suited for charger SMPS and small power inverter application. I-PAK 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = [ ... ]

DFU1N60 PDF Datasheet Download