This part is a kind of semiconductor called DFF4N60.

Function of this product has N-Channel MOSFET.

Manufacturers : DnI

Image and pinout :

Some of the text within the PDF file :

DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and power inverter application. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC [ ... ]

DFF4N60 PDF Datasheet Download