This part is a kind of semiconductor called MRF6V2300NBR1.

Function of this product has RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs.

Manufacturers : Freescale Semiconductor

Image and pinout :

Some of the text within the PDF file :

Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 2, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain 25.5 dB Drain Efficiency 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 [ ... ]

MRF6V2300NBR1 PDF Datasheet Download