This part is a kind of semiconductor called IRFBE30LPBF.

Function of this product has HEXFET Power MOSFET.

Manufacturers : International Rectifier

Image and pinout :

Some of the text within the PDF file :

PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET® Power MOSFET D VDSS = 800V G S RDS(on) = 3.0Ω ID = 4.1A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2Pak IRFBE30S TO-262 IRFBE30L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.1 2.6 16 125 1.0 ± 20 260 4.1 13 2.0 -55 to + 150 Units A c Maximum Power Dissipation [ ... ]

IRFBE30LPBF PDF Datasheet Download