This part is a kind of semiconductor called MRF6V2300NB.

Function of this product has RF Power Field Effect Transistor.

Manufacturers : Motorola Semiconductor

Image and pinout :

Some of the text within the PDF file :

Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain 27 dB Drain Efficiency 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Excellent Thermal Stability • Facilitates Manua [ ... ]

MRF6V2300NB PDF Datasheet Download