This part is a kind of semiconductor called 2SK3565.

Function of this product has TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS).

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3565 2SK3565 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 2.7±0.2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 5 15 45 595 5 4.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 2.6 1 2 3 12.5 Min. 4.5±0.2 1.1 1.1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3. Gate Drain Source [ ... ]

2SK3565 PDF Datasheet Download