This part is a kind of semiconductor called BUZ900DP.

Function of this product has (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET.

Manufacturers : ETC

Image and pinout :

Some of the text within the PDF file :

MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipa [ ... ]

BUZ900DP PDF Datasheet Download