This part is a kind of semiconductor called NE5520279A-T1.

Function of this product has NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET.

Manufacturers : NEC

Image and pinout :

Some of the text within the PDF file :

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX. • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V A 0.4±0.15 5.7 MAX. 0.2±0.1 0.8±0.15 1.0 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain 0.8 MAX. 3.6±0.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSF [ ... ]

NE5520279A-T1 PDF Datasheet Download