This part is a kind of semiconductor called N302AP.

Function of this product has N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs.

Manufacturers : Fairchild

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ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0019Ω (Typ), VGS = 10V • rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF Applications • DC/DC converters SOURCE DRAIN GATE D G DRAIN (FLANGE) S TO-220AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to S [ ... ]

N302AP PDF Datasheet Download