This part is a kind of semiconductor called APT8030JN.

Function of this product has N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.

Manufacturers : Advanced Power Technology

Image and pinout :

Some of the text within the PDF file :

D S G D S G S SO 2 T- 27 APT8030JN APT8035JN 800V 800V 27.0A 0.30Ω 25.0A 0.35Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 8030JN APT 8035JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 800 27 108 ± 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERIS [ ... ]

APT8030JN PDF Datasheet Download