This part is a kind of semiconductor called APT8030B2VR.

Function of this product has Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs..

Manufacturers : Advanced Power Technology

Image and pinout :

APT8030B2VR image and datasheet pinout



Some of the text within the PDF file :

APT8030B2VR 800V 27A 0.300Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ • Faster Switching • Lower Leakage • 100% Avalanche Tested • New T-MAX™ Package (Clip-mounted TO-247 Package) G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT8030B2VR UNIT Volts Amps 800 27 108 ±30 ±40 520 4.16 -55 to 150 300 27 50 4 Gate-Source Voltage Continuous Gate-S [ ... ]


APT8030B2VR PDF Datasheet Download


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2017/11/05 00:15 2017/11/05 00:15