This part is a kind of semiconductor called APT6040BN.

Function of this product has N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.

Manufacturers : Advanced Power Technology

Image and pinout :

Some of the text within the PDF file :

D TO-247 G S APT6040BN 600V ® 18.0A 0.40Ω 17.0A 0.45Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT6045BN 600V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 6040BN APT 6045BN UNIT Volts Amps 600 18 72 ± 30 310 2.48 600 17 68 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Dra [ ... ]

APT6040BN PDF Datasheet Download