This part is a kind of semiconductor called APT4016BN.
Function of this product has N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
Manufacturers : Advanced Power Technology
Image and pinout :

Some of the text within the PDF file :
D TO-247 G S APT4016BN 400V ® 31.0A 0.16Ω 29.0A 0.18Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT4018BN 400V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 4016BN APT 4018BN UNIT Volts Amps 400 31 124 ± 30 360 2.9 400 29 116 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Dr [ ... ]
APT4016BN PDF Datasheet Download
