This part is a kind of semiconductor called IRFD110.

Function of this product has 1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET.

Manufacturers : Intersil Corporation

Image and pinout :

Some of the text within the PDF file :

IRFD110 Data Sheet July 1999 File Number 2314.3 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. Features • 1A, 100V • rDS(ON) = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond S [ ... ]

IRFD110 PDF Datasheet Download