This part is a kind of semiconductor called IRF9Z24N.

Function of this product has Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A).

Manufacturers : International Rectifier

Image and pinout :

Some of the text within the PDF file :

PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resist [ ... ]

IRF9Z24N PDF Datasheet Download