This part is a kind of semiconductor called 2SD2353.

Function of this product has Silicon NPN Triple Diffused Type TRANSISTOR.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.6 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 [ ... ]

2SD2353 PDF Datasheet Download