This part is a kind of semiconductor called 3SK165A.

Function of this product has GaAs N-channel Dual Gate MES FET.

Manufacturers : Sony Corporation

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3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga = 20dB (typ) at 800MHz • High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 8 • Gate 1 to source voltage VG1S –6 • Gate 2 to source voltage VG2S –6 • Drain current ID 80 • Allowable power dissipation PD 150 • Channel t [ ... ]

3SK165A PDF Datasheet Download