This part is a kind of semiconductor called 2SJ496.

Function of this product has Silicon P-Channel MOS FET High Speed Power Switching.

Manufacturers : Hitachi Semiconductor

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2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –5 –20 –5 –5 2.14 0.9 150 –55 to +150 [ ... ]

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