This part is a kind of semiconductor called 2SJ313.

Function of this product has Silicon P Channel MOS Type Field Effect Transistor.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S (typ.) z Complementary to 2SK2013 2SJ313 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg −180 ±20 −1 25 150 −55~150 V V A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product [ ... ]

2SJ313 PDF Datasheet Download