This part is a kind of semiconductor called BSM50GD120DN2E3226.

Function of this product has IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).

Manufacturers : Siemens Semiconductor Group

Image and pinout :

Some of the text within the PDF file :

BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package ECONOPACK 2 Ordering Code C67070-A2514-A67 1200V 50A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 45 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 90 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 350 W + 150 -55 ... + 150 ≤ 0.35 ≤ 0.7 2500 16 11 F 55 / 150 / 56 Jan-10-1997 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperatu [ ... ]

BSM50GD120DN2E3226 PDF Datasheet Download