This part is a kind of semiconductor called IRF3205.

Function of this product has N-Channel MOSFET Transistor.

Manufacturers : Inchange Semiconductor

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF3205 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 55 ±20 V V ID D [ ... ]

IRF3205 PDF Datasheet Download