This part is a kind of semiconductor called 3DD102A.

Function of this product has Silicon NPN Power Transistor.

Manufacturers : Inchange Semiconductor

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to C [ ... ]

3DD102A PDF Datasheet Download