This part is a kind of semiconductor called 1SS401.

Function of this product has Silicon Epitaxial Schottky Barrier Type Diode.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ.) : IR = 50μA (max) : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range VRM 25 V VR 20 V IFM 700 mA IO 300 mA P 100 mW JEDEC JEITA ― SC-70 Tj 125 °C TOSHIBA 1-2P1D Tstg −55 to 125 °C Weigh: 0.006 g(typ.) Topr −40 to 100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/volta [ ... ]

1SS401 PDF Datasheet Download