This part is a kind of semiconductor called CEP83A3G.

Function of this product has N-Channel Enhancement Mode Field Effect Transistor.

Manufacturers : CET

Image and pinout :

Some of the text within the PDF file :

CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 102 72 408 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 83 0.55 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature [ ... ]

CEP83A3G PDF Datasheet Download