This part is a kind of semiconductor called 60N321.

Function of this product has GT60N321.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1 ms Emitter-Collector Forward Current DC 1 ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IECF IECFP PC Tj Tstg ⎯ 1000 ±25 60 120 15 120 170 150 −55 to 150 0.8 V V A A W °C [ ... ]

60N321 PDF Datasheet Download