This part is a kind of semiconductor called 2SC2510.

Function of this product has Silicon NPN POWER TRANSISTOR.

Manufacturers : HGSemi

Image and pinout :

Some of the text within the PDF file :

HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYMBOL V CBO VCES VCEO V EBO IC PC Tj T stg RATING 60 60 35 4 20 250 175 65~175 ELECTRICAL CHARACTERISTICS (Tc = 25°C) UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g 2 13B1A CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter [ ... ]

2SC2510 PDF Datasheet Download