This part is a kind of semiconductor called ME9926.

Function of this product has Dual N-Channel High Density Trench MOSFET.

Manufacturers : Aonetek Semiconductor

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Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5V 20V 5.2A 44 @ VGS = 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Ideal for Li ion battery pack application. SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 6 24 1.7 2.0 1.3 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Ther [ ... ]

ME9926 PDF Datasheet Download