This part is a kind of semiconductor called 3DG130.

Function of this product has NPN Silicon High Frequency Middle Power Transistor.

Manufacturers : Shaanxi Qunli

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Some of the text within the PDF file :

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max. Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-B Breakdown Voltage V(BR)EBO V Collector- Emitter VCE(sat) Saturation Voltage Drop V [ ... ]

3DG130 PDF Datasheet Download