This part is a kind of semiconductor called K1119.

Function of this product has 2SK1119.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 1000 ±20 4 12 100 150 −55~150 V V V A W °C °C JEDEC TO-220AB JEI [ ... ]

K1119 PDF Datasheet Download