This part is a kind of semiconductor called 4N60F.

Function of this product has 600V N-Channel MOSFET.

Manufacturers : GFD

Image and pinout :

Some of the text within the PDF file :

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 4N60/4N60F VDSS RDS(ON) ID 600V 2.5Ω 4A Features • 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 4N60/4N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 4N60/4N60F Absolute Maximum Ratings TC = [ ... ]

4N60F PDF Datasheet Download