This part is a kind of semiconductor called 2SC1969.

Function of this product has Silicon NPN Power Transistor.

Manufacturers : INCHANGE

Image and pinout :

Some of the text within the PDF file :

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6A 20 W 1.7 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient 73.5 ℃/W Thermal Resistance,Junction to C [ ... ]

2SC1969 PDF Datasheet Download